RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials

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The RHEED intensity variation during the growth of GaAs with an alternating supply of TEGa and As_4 is investigated. The measurements of the RHEED intensity recovery after supplying As_4 molecules on the Ga-deposited surface and the growth rate of GaAs in the alternating TEGa and As_4 supply mode demonstrate that Ga deposition time T_0, at which the RHEED intensity rise to a maximum, corresponds exactly to the Ga monolayer formation time. Using T_0 as a measure of the Ga monolayer formation time, the decomposition rate of TEGa molecules is investigated as a function of the substrate temperature. The TEGa decomposition reaction takes place in the substrate temperature range of 350-450℃.The growth rate measurement shows that the decomposition rates are same on the As- and Ga-terminated surface.
社団法人応用物理学会の論文
1988-12-20