Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
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概要
- 論文の詳細を見る
GaAs layers are epitaxially grown on (100) Si substrates by metalorganic MBE (MOMBE) using triethylgallium and solid arsenic. All epilayers show p-type conductivity caused by carbon incorporation. The reproducibly obtained single-domain GaAs epilayers have almost featureless morphology. The X-ray diffraction measurements indicate that the MOMBE-grown layer is of high crystalline quality. The 4 K photoluminescence spectrum exhibits a strong, excitonic transition peak with a linewidth of 4.9 meV. These results can compete with those reported previously for the MOCVD-grown GaAs on Si.
- 社団法人応用物理学会の論文
- 1989-05-20
著者
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渡部 行男
九大院理
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UETA Makoto
NTT Optoelectronics Laboratories
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OHMACHI Yoshiro
NTT Optoelectronics Laboratories
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Ohmachi Y
Ntt Optoelectronics Laboratories
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Ohmachi Yoshiro
Ntt Applied Electronics Laboratories
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WATANABE Yoshio
NTT Applied Electronics Laboratories
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UNETA Makoto
NTT Applied Electronics Laboratories
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Watanabe Yoshio
Ntt Advanced Technology Corporation
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