XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal and Ceramics Surfaces

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-06-20

著者

• 渡部 行男

  九大院理

• 渡辺 征夫

  九州大学

• Watanabe Yoshihide

  Department Of Electronics Faculty Of Engineering Tottori University

• NAKANISHI Shigemitsu

  Department of Materials Science, University of Osaka Prefecture

• KISHIDA Satoru

  Department of Electronics, Faculty of Engineering, Tottori University

• TOKUTAKA Heizo

  Department of Electronics, Faculty of Engineering, Tottori University

• NAKANISHI Shuuichi

  Department of Electronics, Faculty of Engineering, Tottori University

• FUJIMOTO Hiroshi

  Department of Electronics, Faculty of Engineering, Tottori University

• NISHIMORI Katsumi

  Department of Electronics, Faculty of Engineering, Tottori University

• ISHIHARA Naganori

  Department of Electronics, Faculty of Engineering, Tottori University

• FUTO Wataru

  Department of Electronics, Faculty of Engineering, Tottori University

• TORIGOE Seiji

  Department of Electronics, Faculty of Engineering, Tottori University

• HARADA Hisamochi

  Department of Electronics, Faculty of Engineering, Tottori University

• Kishida S

  Opto-electronics Research Laboratories Nec Corporation

• Ishihara N

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Ishihara Naganori

  Department Of Electronics Faculty Of Engineering Tottori University

• Kishida Satoru

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Tokutaka H

  Tottori Univ. Tottori Jpn

• Tokutaka Heizo

  Som Japan Inc.

• Tokutaka Heizo

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Nishimori K

  Tottori Univ. Tottori Jpn

• Fujimoto H

  Daido Inst. Technol. Nagoya Jpn

• Futo Wataru

  Department Of Electrical And Electronic Engineering Tottori University

• Torigoe Seiji

  Department Of Electronics Faculty Of Engineering Tottori University

• Nakanishi S

  Univ. Tokyo Jpn

• Harada Hisamochi

  Department Of Electronics Faculty Of Engineering Tottori University

• Ishihara Naganori

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Fujimoto Hiroshi

  Department Of Applied Electronics Daido Institute Of Technology

• NISHIMORI Katsumi

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Tottori University

• Fujimoto Hiroshi

  Department of Advanced Energy, Graduate School of Frontier Sciences, The University of Tokyo

関連論文

• 23pHS-7 超高真空原子間力顕微鏡によるTSSG BaTiO_3結晶の分域観察(23pHS 誘電体(マルチフェロイック・ドメイン),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 23pHS-6 強誘電体の伝導ピーク現象と分域のその場観察(23pHS 誘電体(マルチフェロイック・ドメイン),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• Thermally Induced Structural Modification of Nanometer-Order Mo/Si Multilayers by the Spectral Reflectance of Laser-Plasma Soft X-Rays
• Single-Shot Measurement of Spectral Reflectance of a Soft X-Ray Multilayer Mirror Using a Laser-Plasma X-Ray Source
• 25aZD-4 BaTiO_3単結晶のn型及びp型表面伝導の検討(25aZD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• Hypogenesis of intramural vascularity and perivascular plexuses of gallbladder in patients with congenital biliary dilatation
• 27aYJ-3 バルク起源の一方向性電気伝導 : 一般の捕獲準位とBiFeO_3実験との比較(誘電体(理論・SrTiO_3),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 26aYJ-7 AFM測定方法の違いによる強誘電体の表面構造の比較(誘電体(酸化物),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 25pYJ-4 原子レベルで制御された強誘電体表面(強誘電体格子系の精密制御法と新物性,領域10シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 25aYJ-1 原子間力顕微鏡と圧電応答顕微鏡による原子ステップと分域の観察-2(誘電体(BaTiO_3関連),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 29pRF-9 原子レベルに表面を制御したチタン酸バリウム単結晶の表面伝導(29pRF 誘電体(BaTiO_3系),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 29pRF-8 超高真空原子間力顕微鏡によるBaTiO_3分域の表面電位変化の観察(29pRF 誘電体(BaTiO_3系),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 29pRF-7 原子間力顕微鏡と圧電応答顕微鏡による原子ステップと分域の観察(29pRF 誘電体(BaTiO_3系),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pVE-3 超高真空原子間力顕微鏡によるBaTiO_3分域の変化の観察(22pVE 誘電体(ペロフスカイト),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22aVE-5 絶縁体における非表面起源のダイオード的電流電圧特性 : 実験との比較(22aVE 誘電体(輸送現象),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22aVE-4 絶縁体における非表面起源のダイオード的電流電圧特性 : 背景と定式化(22aVE 誘電体(輸送現象),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22aVE-3 BaTiO_3単結晶の表面伝導層の安定性(22aVE 誘電体(輸送現象),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 領域10「強誘電体分域の測定法の新展開と新しい分域像」(第63回年次大会シンポジウムの報告)
• 26aYE-8 BaTiO_3単結晶の伝導異常と構造との関係(誘電体(BaTiO_3関連),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 26aYE-9 超高真空原子間力顕微鏡(UHV-AFM)による清浄化BaTiO_3表面の観察(誘電体(BaTiO_3関連),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24aYE-7 強誘電体180°分域理論の整合性の検討(誘電体(水素結合),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pYE-1 はじめに(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 20aXA-7 n,ρ型BaTiO_3単結晶のσ-T、σ-t特性(誘電体(BaTiO_3系),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
• 20aXA-8 大気AFM, UHV-AFMによるBaTiO_3の分域の比較(誘電体(BaTiO_3系),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
• 29a-Q-1 Pb(Ti, Zr)O_3強誘電体界面の輸送特性の分極依存性
• XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal and Ceramics Surfaces
• Surface Analysis of YBa_2Cu_3O_x and Bi-Sr-Ca-Cu-O Superconductors by Auger Electron Spectroscopy
• Effects of Water on the Resistance-Temperature Characteristics of YBa_2Cu_3O_ Oxides : Electrical Properties of Condensed Matter
• Effects of Preparation conditions and Mechanical Polishing on the Superconducting Behavior of High-T_c Oxide Y_1Ba_2Cu_3O_
• 29aXJ-3 エピタキシャル BaTiO_3 薄膜の電流の温度異常と表面相転移
• 28pYR-2 Pb(Zr,Ti)O_3界面における光電流応答
• 23pYQ-5 分極制御した清浄なBaTiO_3自由表面上の電気伝導 : 強誘電体表面電子相の可能性 (初期検討)
• 25pYJ-12 BaTiO_3金属絶縁体転移組成の広域分光測定 : 強誘電性への酸素欠陥効果
• 30p-YD-1 BaTiO_3エピタキシャル膜のnmスケールショットキー特性
• Reincrease in Electron Density in the Current-Decaying Phase of Pulsed-Discharge of Argon-Hydrogen Mixture : Nuclear Science, Plasmas and Electric Discharges
• Generation of a Large Swelling in the Spatial Magnetic Field Profile near the Coil Axis of a Theta Pinch
• On Shifting of Plowed Plasma to Back of Current Sheath in Implosion Phase of Theta-Pinch
• Generation of Magnetic Islands Caused by Periodical Nonuniformity of Axial Magnetic Field for FRC Formation Phase
• Study on Electron Density Dependence of Metastable Ar^+ Density in Pulsed-Discharge Plasma by Using LIF Method
• On Applicability of Laser-Induced Fluorescence from the Metastable State of Argon Ions to Ion Density Measurements
• Dependence of Evolution of Field Reconnection at Coil End Region on Mirror Field in FRC Formation Stage
• Observation of the Anomalous Swelling of a Local Magnetic Field in a Linear Theta Pinch
• Ion Saturation Current in a Orbital Motion Limited Region
• 21aXA-14 PTCR効果の電圧依存性(誘電体(マルチフェロイック関連),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
• Epitaxial Stress Effect on Crystallographic Properties of Bi_4Ti_3O_ Heterostructures and Their Leakage Current Behaviors
• Memory Retention and Switching Speed of Ferroelectric Field Effect in (Pb, La)(Ti, Zr)O_3/La_2CuO_4:Sr Heterostructure
• A Preliminary Experimental Study on Dielectric Properties of Metal/(Pb, La)(Ti, Zr)O_3/Semiconductive Perovskite Heterostructures
• All-Perovskite Ferroelectric/Semiconductor Field Effect Transistor
• Crystallographic and Electrical Properties of Epitaxial BaTiO_3 Film Grown on Conductive and Insulating Perovskite Oxides ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Magnetic Phase Transitions in 90 K Superconductors HoBa_2Cu_3O_ and GdBa_2Cu_3O_ Observed by ZF-μ^SR : Electrical Properties of Condensed Matter
• First Observation of an Antiferromagnetic Phase in the Y_1Ba_2Cu_3O_x System
• 25aWY-5 反電界に対する正しい誘電率(25aWY 酸化物系,領域10(誘電体格子欠陥,X線・粒子線フォノン))
• 会議だより 第11回強誘電体国際会議(IMF-11)
• μ^+SR Studies of Magnetic Properties of the YBa_2Cu_3O_xSystem
• 20aXA-1 強誘電体Pb_La_xZr_Ti_yO_3薄膜の輸送特性の温度依存性(誘電体,領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
• 20aYM-3 格子不整合BaTiO_3薄膜のPTCR的非線型伝導異常(誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 18aWE-8 SrTiO_3単結晶の可逆的電流誘起金属-絶縁体転移
• A Photoemission Study of Al and Au Overlayers on Se/GaAs(100)
• Selective, Maskless Growth of InSb on Selenium-Treated GaAs by Molecular Beam Epitaxy
• Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
• Se Segregation and Chemical Bonding in Pd/Se/GaAs
• Epitaxy, Modification of Electronic Structures, Overlayer-Substrate Reaction and Segregation in Ferromagnetic Co Films on Se-Treated GaAs(001) Surface
• Resonant Photoemission Spectroscopy of Ga 3d Two-Hole State of GaAs : Condensed Matter: Electronic Properties, etc.
• Photoelectron Spectroscopy of EuBa_2Cu_3O_ Thin Film Surfaces Treated by an Electron Cyclotron Resonance Oxygen Ion Beam
• Water-Immersion-Induced Surface Reactiorns of EuBa_2Cu_3O_y Thin Films
• Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
• A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• 4.プロセスプラズマ中の微粒子の凝集と輸送(「プラズマと微粒子」研究の諸分野における進展)
• Normal Incidence Multilayer Mirrors for Soft X-Rays (光学薄膜特集号)
• Optical Design for Soft X-Ray Projection Lithography : X-Ray Lithography
• 27pYA-1 SrTiO_3,LaGaO_3の電気伝導(27pYA 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 27pYA-2 BaTiO_3単結晶表面伝導の酸素抜け効果の検討(27pYA 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 27pYA-3 BaTiO_3と(Pb(Zn_Nb_)O_3)_(PbTiO_3)_の相転移における伝導率ピークのIt特性による検討(27pYA 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 20aYM-2 BaTiO_3単結晶の伝導異常への電極及び不純物効果(誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 20aYM-1 分極処理によるBaTiO_3単結晶の伝導率の変化(誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 25pYR-10 BaTiO_3TSSG単結晶の伝導異常の広域温度特性(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
• 25pYR-8 BaTiO_3単結晶の相転移での伝導異常のI-t測定からの解析(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
• Throughput Measurement of a Multilayer-Coated Schwarzschild Objective Using Synchrotron Radiation
• Optical Design for Soft X-Ray Projection Lithography
• Seed-Atom Density Profiles in a Boundary Layer on a Flat Plate in MHD Combustion Gas Plasmas : Nuclear Science, Plasmas and Electric Discharges
• Near-Resonant Rayleigh Scattering Method for Measurements of Alkali Atomic Density in Combustion Gas Plasmas
• SONRES for Measurement of Relative Spatial Seed Distribution in Channel of MHD Power Generator
• Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
• Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer
• Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
• RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Investigation of Particulate Growth Processes in RF Silane Plasmas Using Light Absorption and Scanning Electron Microscopic Methods ( Plasma Processing)
• 25aZD-6 原子間力顕微鏡と構造解析によるBaTiO_3薄膜の伝導異常の解析(25aZD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 25pYR-9 BaTiO_3格子不整合エピ薄膜の伝導異常の熱処理分極処理依存性(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
• 29pXK-7 格子不整合なBaTiO_3エピタキシャル膜の伝導の温度依存性(誘電体)(領域10)
• Fabrication of Nanoparticle Composite Porous Films Having Ultralow Dielectric Constant
• Highly Stable a-Si:H Films Deposited by Using Multi-Hollow Plasma Chemical Vapor Deposition
• Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films
• Effects of Gas Temperature Gradient, Pulse Discharge Modulation, and Hydrogen Dilution on Particle Growth in Silane RF Discharges
• GaSb-Growth Study by Realtime Crystal-Growth Analysis Systemu Using Synchrotron Radiation Photoelectron Spectroscopy
• 20pXA-11 強誘電体表面の本質的自由電子ホール層(招待講演,誘電体(BaTiO_3系・SrTiO_3系),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
• 領域10,5,8,3「誘電体の電子ダイナミクス」(第61回年次大会シンポジウムの報告)
• 29pYA-1 はじめに(29pYA 領域10,領域5,領域8,領域3合同シンポジウム:誘電体の電子ダイナミクス,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 27pYA-4 BaTiO_3エピタキシャル薄膜の伝導異常の実験的解析(27pYA 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 29pYA-1 はじめに(29pYA 領域10,領域5,領域8,領域3合同シンポジウム:誘電体の電子ダイナミクス,領域8(強相関系:高温超伝導,強相関f電子系など))

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