Ohmachi Yoshiro | Ntt Applied Electronics Laboratories

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概要

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著作論文

Generation of Misfit Dislocations in Si_Ge_x/Si Heterostructures
Dislocation Reduction in MBE-Grown Ge on Si (001) by in situ Thermal Annealing : Condensed Matter
Misfit Dislocation Structures at MBE-Grown Si_Ge_x/Si Interfaces : Surfaces, Interfaces and Films
DLTS Measurement on Electron-Irradiated GaAs-on-Si
Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer
Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
Initial Stages of Epitaxial Growth of GaP on Si with AsH_3 Preflow
Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter
Critical Thickness for the Si_Ge_x/Si Heterostructure
Depth-Resolved Cathodoluminescence in GaAs Epilayers Grown on Si Substrates
InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition

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