DLTS Measurement on Electron-Irradiated GaAs-on-Si
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概要
- 論文の詳細を見る
Three electron traps, E3^*, E4^*, and E5^*, are observed in 1 MeV-electron-irradiated GaAs-on-Si by using DLTS measurement. The characteristics of these traps are similar to those of E3, E4, and E5 in irradiated GaAs-on-GaAs. The slightly lower activation energies and broader DLTS peaks of the traps in GaAs-on-Si than those in GaAs-on-GaAs might be caused by band-gap decrease and valence-band splitting of biaxially strained GaAs on Si.
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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KADOTA Yoshiaki
NTT Photonics Laboratories
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OHMACHI Yoshiro
NTT Optoelectronics Laboratories
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Ohmachi Y
Ntt Optoelectronics Laboratories
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Ohmachi Yoshiro
Ntt Applied Electronics Laboratories
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Kadota Y
Ricoh Co. Ltd. Yokohama Jpn
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Kadota Y
Ntt Photonics Lab. Atsugi‐shi Jpn
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Kadota Yoshiaki
Ntt Applied Electronics Laboratories
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Oh'hara Takahiko
Ntt Applied Electronics Laboratories
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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OKAMOTO Hiroshi
NTT Applied Electronics Laboratories
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