High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-04-20
著者
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Kasukawa A
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
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Kasukawa Akihiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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IMAJO Yoshihiro
Optoelectronics Technology Research Corporation, c
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MURGATROYD Ian
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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IMAJO Yoshihiro
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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MATSUMOTO Narihito
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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FUKUSHIMA Toru
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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OKAMOTO Hiroshi
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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KASHIWA Susumu
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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Murgatroyd Ian
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Kashiwa S
Optoelectronics Technology Research Corporation C
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Kashiwa Susumu
O Yokohama Rampd Laboratories The Furukawa Electric Co. Ltd.
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Imajo Yoshihiro
Optoelectronics Technology Research Corporation C
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Fukushima Toru
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Matsumoto Narihito
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
関連論文
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- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Correlation between Microstructure and Photovoltaic Performance of Polycrystalline Silicon Thin Film Solar Cells(Semiconductors)
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Temperature Dependence of Hot-Electron-Induced Electroluminescence from Hydrogenated Amorphous Silicon
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy
- Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films
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- Output Power Enhancement of a Chemical Oxygen-Iodine Laser by Predissociated Iodine Injection
- Observation of Room Temperature Excitons in GaSb-AlGaSb Multi-Quantum Wells
- Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Characteristics of an Optical Filter Composed of Two Vertically Coupled Microring Resonators(Optoelectronics)
- 沃素のマイクロ波放電解離を用いた超音速化学酸素沃素レｰザ
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- A Way of Distinguishing Chaos from Random Fractal Sequences Based on the Difference in Time Reversal Symmetry
- Temperature Dependence of Photothermal Divergence Signal of GaAs
- An Optimal Metric for Predicting Chaotic Time Series
- Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
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- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
- GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
- High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
- In-Situ Etching of Semiconductor with CBr_4 in Metalorganic Chemical Vapor Deposition (MOCVD) Reactor
- Expression of Low-Molecular-Weight Kininogen in Mouse Vascular Smooth Muscle Cells
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- The Lipopolysaccharide-Induced Up-Regulation of Bradykinin B_2-Receptor in the Mouse Heart Is Mediated by Tumor Necrosis Factor-α and Angiotensin II(Pharmacology)
- Expressions of Bradykinin B2-Receptor, Kallikrein and Kininogen mRNAs in the Heart Are Altered in Pressure-Overload Cardiac Hypertrophy in Mice
- Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
- Near Room Temperature CW Operation of 660 nun Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
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- Amorphous-Silicon Photovoltaic X-Ray Sensor
- DLTS Measurement on Electron-Irradiated GaAs-on-Si
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
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