1.3μm AlGaInAs MQW Inner-Stripe Laser Diodes(Joint Special Issue on Recent Progress in Optoelectronics and Communications)

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We fabricated 1.3μm AlGaInAs inner-stripe laser diodes (LDs), employing a GaInAsP waveguide layer arid an n-InP current blocking layer. We compared the effects of the thickness of n-InP current blocking layer. A blocking layer with 500nm thick restricts the leakage current significantly. The inner-stripe LD was compared with the conventional ridge LD. 1-L characteristics of both types of LDs were measured. Threshold currents of the inner-stripe LD and the ridge LD were 8.5 and 10.6mA, respectively. A threshold current of the inner-stripe LD is smaller than that of ridge LD. And the resistance of the inner-stripe LD was a few ohms lower than that of the ridge LD. Output power of 88mW was obtained at 200mA with 300μm-long cavity. This was twice the power of a conventional ridge laser. The characteristic temperature of the inner-stripe LD was obtained 76K from 20 to 85℃. Weobtained a good linearity up to 100mA at 85℃. Therefore the inner-stripe LD has an advantage of high power devices.
社団法人電子情報通信学会の論文
2003-05-01