Transverse Mode Control and Reduction of Thermal Resistance in 850nm Oxide Confined VCSELs(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)

概要

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The methods for the transverse mode control and temperature characteristics improvement in 850nm oxide confined vertical cavity surface emitting lasers (VCSELs) were investigated. For transverse mode control, dielectric aperture was demonstrated to suppress higher order modes. Substitution of AlAs for Al_<0.9> Ga_<0.1>As in partial bottom DBR was demonstrated to reduce thermal resistance of the devices and to enable operation in high temperature of 85℃.
社団法人電子情報通信学会の論文
2002-01-01