InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)
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概要
- 論文の詳細を見る
This paper describes the successful stacking of multilayered InAs quantum dots (QD) on a GaAs substrate up to 12 layers. The laser oscillated from the ground state under the condition of mirror loss at less than 7–8 cm-1. The extremely low threshold current density per QD-layer of 7 A/cm2/layer was obtained with a lasing wavelength of 1.21 μm at room temperature, which is the lowest value for any known semiconductor laser.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-08-10
著者
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Yoshida Junji
Department Of Cardiorenal Cerebrovascular Medicine Kagawa University Faculty Of Medicine
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Saravanan Shanmugam
Department Of Nonlinear Science Atr Wave Engineering Laboratories
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Ibe Sayoko
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
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Shimizu Hitoshi
Department Of Earth And Planetary Systems Science Graduate School Of Science Hiroshima University
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Yokouchi Noriyuki
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
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Yoshida Junji
Department of Nonlinear Science, ATR Wave Engineering Laboratories, 2-2-2 Hikaridai, "Keihanna Science City", Kyoto 619-0288, Japan
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Saravanan Shanmugam
Department of Nonlinear Science, ATR Wave Engineering Laboratories, 2-2-2 Hikaridai, "Keihanna Science City", Kyoto 619-0288, Japan
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SHIMIZU Hitoshi
Department of Anesthesiology, Obihiro Kyokai Hospital
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