InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers

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Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy
Specimen preparation for high-resolution transmission electron microscopy using focused ion beam and Ar ion milling
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1.3μm AlGaInAs MQW Inner-Stripe Laser Diodes(Joint Special Issue on Recent Progress in Optoelectronics and Communications)
1.3 μm AlGaInAs MQW Inner-Stripe Laser Diodes (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Transverse Mode Control and Reduction of Thermal Resistance in 850nm Oxide Confined VCSELs(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity
Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
In-Situ Etching of Semiconductor with CBr_4 in Metalorganic Chemical Vapor Deposition (MOCVD) Reactor
Long-Wavelength Multilayered InAs Quantum Dot Lasers
Very Weak Dependence on Temperature of 980-nm InGaAs/InGaAsP/InGaP Lasers
GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector
An Optical Absorption Property of Highiy Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy
Beryllium Doping for Ga_In_As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
Room-Temperature Observation of Excitonic Absorption in Ga_xIn_As/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy
GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy
Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy
Cracking Yield Dependence of InP Growth by Chemical Beam Epitaxy
Growth of Ga_In_As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)
Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field
Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer
Long-Wavelength Multilayered InAs Quantum Dot Lasers
InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)

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