GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy
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概要
- 論文の詳細を見る
Ga_xIn_<1-x>As/InP (0.2≤x≤0.47) quantum wells were grown by chemical beam epitaxy. The thinnest well of two monolayers was obtained and confirmed by transmission electron microscope. Room temperature phtoluminescence emision was observed from two-monolayer quantum wells which peaked at 1.0 μm. Strained quantum wells were grown with successive well thickness from 9 Å to 60 Å. By optimizing the growth sequence, we obtained a phtoluminescence linewidth of 15 meV from 20 Å to 60 Å wells at 77 K.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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YOKOUCHI Noriyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Iga Kenichi
Tokyo Institute Of Technology
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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UCHIDA Takashi
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Uchida Toshi
Tokyo Institute of Technology
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