An Optical Absorption Property of Highiy Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy
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概要
- 論文の詳細を見る
The optical absorption property of highly beryllium (Be)-doped GaInAsP (λ_g=1.31 μm, p=2×10^<19> cm^<-3>) grown by chemical beam epitaxy (CBE) was investigated. The absorption coefficient was estimated from tl?e transmissivity of a Fabry-Perot resonator formed by selective etching of an InP substrate. We found a fairly large absorption (α≅400 cm^<-1>) in Be-doped material in the longer wavelength region (λ>1.35 μm).
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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YOKOUCHI Noriyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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MIYAMOTO Tomoyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Iga Kenichi
Tokyo Institute Of Technology
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Inaba Yusaku
Department Of Materials Chemistry Graduate School Of Engineering Tohoku University
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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INABA Yuichi
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Ikenaga Yoshihiko
Microsystem Research Ceterk Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Inaba Y
Department Of Materials Chemistry Graduate School Of Engineering Tohoku University
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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UCHIDA Takashi
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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