Comparison of Luminescence from InP Processed by Reactive Ion Beam Etching
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概要
- 論文の詳細を見る
To obtain a low damage etching condition and to eliminate the damage to InP induced by reactive ion beam etching (RIBE), we compared photoluminescence intensities of etched samples. We also compared electroluminescence of a buried heterostructure laser fabricated using RIBE with stripe lasers. The obtained suitable condition is as follows: the substrate temperature is 150〜175℃; the ion extraction voltage is 300 V; and gas pressure is 1.2×10^<-3> Torr.
- 社団法人応用物理学会の論文
- 1990-02-20
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Tadokoro T
Special Research Laboratory For Optical Science Kanagawa Academy Of Science And Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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TADOKORO Takashi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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