First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
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概要
- 論文の詳細を見る
We have achieved the room temperature cw lasing operation of GaInAsP / InP surface emitting lasers for the first time. By employing a buried heterostructure with 1.3 μm range active region and a MgO / Si heat sink mirror, cw operation was obtained up to 14℃ with the threshold current of 22 mA.
- 社団法人電子情報通信学会の論文
- 1993-09-25
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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BABA Toshihiko
Division of Electrical and Computer Engineering, Yokohama National University
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Suzuki Katsumasa
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Baba T
Yokohama National Univ. Yokohama‐shi Jpn
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Yogo Yukiaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Baba Toshihiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Yogo Yukiaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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