Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
Takeuchi K
Riken (the Institute Of Physical And Chemical Research)
-
Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
-
Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
-
Takeuchi K
Greduate School Of Science And Engineering Saitama University:riken (the Institute Of Physical And C
-
MIYAMOTO Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
-
Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
-
TAKEUCHI Kanji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
-
Teraishi Kazuo
Department Of Materials And Chemistry Graduate School Of Engineering Tohoku University
-
Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
関連論文
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Y-Ba-Co-O/Nb Tunnel Type Josephson Junctions
- Electrical Properties of La-Sr-Cu-O/Al Contact
- Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Photocuring Kinetics for Polyfurfurylmethacrylate Doped with Fullerene:The Influence of Oxygen Partial Pressure on Sensitivity : Atoms, Molecules, and Chemical Physics
- Depth-Profile for the Photo-Curing of the Photo-Oxidation Induced Polycondensation(POP) Resin
- Influence of the Oxygen Partial Pressure on the Photo-Curing of Photo-Oxidation lnduced Polycondensation Resin
- Photo-oxidation Induced Polycondensation Resin(1)
- Characterization of Residual Stress in Active Region due to AlAs Native Oxide of Vertical-Cavity Surface-Emitting Lasers
- In situ Observation of Etching Profile in Inductively Coupled Plasma Etching of GaAs and InP using Long Distance Microscope
- Fluorine Doping and Superconductivity of Nd_2CuO_4 Thin Films
- Reversible T_c Change in Bi-Sr-Ca-Cu-O Thin Films by UV Photo and Thermal Annealings : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- Reversible Resistivity Control of Ba_2YCu_3O_ Thin Films by Laser Annealing : Electrical Properties of Condensed Matter
- Preparation of High-T_c Bi-Sr-Ca-Cu-O Superconducting Thin Films by AC Sputtering : Electrical Properties of Condensed Matter
- Laser Flash Photolysis Studies on the Model System for Photo-Oxidation-Induced Polycondensation Polyimides with Fullerene C_
- Efficient Acetalization of Epoxy Rings on a Fullerene Cage
- New Photosensitive Polyimide System for Sealing High-Density Semiconductor Chip : Atoms, Molecules, and chemical physics
- Polymer Structural Effect on Photosensitivity and Thermal Stability of the Photosensitive Epoxy Resin Using the Photooxidation-induced Polycondensation Mechanism
- Tight-Binding Molecular Dynamics Study of Hydrogen Molecule Inside Silicon Crystal
- Tight-binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111) Surface
- Quantum Chemical Study on the Interaction of NF3 with Si
- Tight-Binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111) Surface
- Periodic Boundary Quantum Chemical Study on ZnO Ultra-Violet Laser Emitting Materials
- Periodic Boundary Quantum Chemical Study on ZnO Ultra-Violet Laser Emitting Materials
- InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
- Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction
- Long Wavelength GaInAsP/InP Laser with n-n Contacts Using AlAs/InP Hole Injecting Tunnel Junction
- Highly Accurate CO_2 Gas Sensor Using a Modulation-Type Pyroelectric Infrared Detector
- Modulation Type Pyroelectric IR Detector
- Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
- Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Characteristics of Surface Acoustic Wave on AlN Thin Films
- Parallel Optical-Transmission Module Using Vertical-Cavity Surface-Emitting Laser Array and Micro-Optical Bench (MOB) : Optics and Quantum Electronics
- Collimation Characteristics of Planar Microlens for Parallel Optical Interconnect
- Fundamental Study of Parallel Moduling Scheme Based on a Micro-Optical Bench and Collimating Planar Microlenses
- A Bidirectional Optical Module Based on Stacked Planar Optical Circuit
- Two-Dimensional Alignment-Free Optical Interconnect Using Micro Optical Bench Scheme
- An Optical Network Unit (ONU) Chip Based on Stacked Planar Optics
- A Microoptic Network Unit Using Planar Microlens Array
- Optical Dispersion Characteristics of Planar Microlenses
- Self-Aligning Optical Interconnect Scheme Using Put-in Microconnector (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Y-BA-CU-O/NB JOSEPHSON TUNNEL-JUNCTIONS
- Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
- GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
- Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs
- New High-Phase-Velocity Leaky Surface Acoustic Wave Mode on LiTaO_3 and LiNbO_3
- Optical Pattern Recognition Experiments of Walsh Spatial Frequency Domain Filtering Method
- Optical Pattern Recognition System Based on Parallel Spatial Filtering Using Synthetic Discriminant Function
- Near-Field Analysis of Micro-Aperture Surface Emitting Laser for High Density Optical Data Storage
- Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage
- High-Power CW Operation of GalnAsP/InP Superlumlnescent Light-Emitting Diode with Tapered Active Region : Optics and Quantum Electronics
- Solid Source Dry Etching Process for GaAs and InP
- Iodine Solid Source Inductively Coupled Plasma Etching of InP
- Vertical and Smooth Microfabrication of InP Using Simple High-Density Plasma System with SmCo Ring Magnet
- Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl_2
- Cl_2-based Inductively Coupled Plasma Etching of InP Using Internal Antenna
- Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
- Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
- Investigation of the Characteristics of a Piezoelectric Chopper for a Modulation-Type Pyroelectric Infrared Detector
- Oxygen Control in Bi_2Sr_2Ca_1Cu_2O_x Superconducting Thin Films by Activated Oxygens
- Y-BA-CU-O THIN-FILMS BY EVAPORATING THE 3 ELEMENTS USING RESISTIVE HEATING
- Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP
- Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
- Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl_2/Xe
- Vertical and Smooth Etching of InP by Cl_2/Xe Inductively Coupled Plasma
- Noise Suppression and Intensity Modulation in Gain-Saturated Semiconductor Optical Amplifiers and Its Application to Spectrum-Sliced Light Sources
- High Power GaInAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (II) : Semiconductor Distributed Bragg Reflectors
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (I) : Dielectric Cavity Structures
- Vertical Cavity Surface-Emitting Laser Array for 1.3μm Range Parallel Optical Fiber Transmissions
- Y-Ba-Cu-O/AlO_x/Nb Josephson Tunnel Junctions
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
- First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
- Properties of Yb-Ba-Cu-O Superconductors Prepared by a Plasma-Arc Melting and Rapid Quenching Method
- A New-Structure IR Gas Sensor
- Modulation Type Pyroelectric Infrared Sensor Using LiTaO_3 Single Crystal : P: Pyroelectrics
- Heavily p-Type Doped AlAs Growth on GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement
- GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
- GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector
- Spray Selective Etch Process for Short-Cavity Fabrication of GaAs/GaAlAs Surface Emitting Laser
- P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure
- 2×2 Multiwavelength Micromachined AIGaAs/GaAs Vertical Cavity Filter Array with Wavelength Control Layer
- Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
- Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
- Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step Etch
- Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer
- Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine