GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure
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概要
- 論文の詳細を見る
An AlAs oxide current confinement structure based on an InP substrate has been demonstrated for the first time to realize low threshold long wavelength surface emitting lasers. The oxidized width is confirmed to be well controllable by choosing suitable oxidation time and temperature. We fabricated an metalorganic chemical vapor deposition (MOCVD) grown 1.65-μm wavelength GaInAs/AlGaInAs multiple quantum well (MQW) edge emitting laser with the AlAs-oxide confinement structure of 3 μm-wide and 15 μm-wide windows. A 3 μm-wide window oxidized laser having uncoated facets exhibits a threshold of 51 mA for device with a 800-μm-long cavity. We have obtained a threshold current density of 1.3 kA/cm^2 for 3 μm-wide window devices. The results show a potential application of the proposed structure for low threshold long-wavelength surface emitting lasers.
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Hatori Nobuaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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OHNOKI Noriyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MIZUTANI Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ohnoki Noriyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ohtake N
Niigata Univ. Niigata Jpn
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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