Proposal and Demonstration of AlAs-Oxide Confinement Structure for InP-Based Long Wavelength Lasers
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概要
- 論文の詳細を見る
We have demonstrated an AlAs oxidation process for current and light confinement in the AlGaInAs/InP system for the first time. A lattice-mismatched 200-Å-thick AlAs layer grown on an InP substrate by metalorganic chemical vapor deposition (MOCVD) was selectively oxidized. The temperature dependence of the oxidation rate was examined. The oxidized AlAs showed good electric isolation characteristics for lateral current confinement. The proposed AlAs-oxide confinement structure formed on an InP substrate may facilitate fabrication and threshold reduction of long wavelength lasers including vertical-cavity surface-emitting lasers.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-01-15
著者
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Hatori Nobuaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Mukaihara Toshikazu
Precision & Intelligence Lab., Tokyo Institute of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MIZUTANI Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ohnoki Noriyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Ohnoki Noriyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
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Mukaihara Toshikazu
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
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Hatori Nobuaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
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Mizutani Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
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