High-Power CW Operation of GalnAsP/InP Superlumlnescent Light-Emitting Diode with Tapered Active Region : Optics and Quantum Electronics
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概要
- 論文の詳細を見る
- 2001-07-01
著者
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Inoue K
Technol. Res. Inst. Osaka Prefecture Osaka Jpn
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga K
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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SEKIGUCHI Shigeaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Iga K
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Shinada S
National Institute Of Information And Communications Technology
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YAMATOYA Takeshi
Precision and Intelligence Laboratory, Microsystem Research Center, Tokyo Institute of Technology
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Yamatoya T
Tokyo Inst. Technol. Yokohama Jpn
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Yamatoya Takeshi
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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