GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
スポンサーリンク
概要
- 論文の詳細を見る
A multi-quantum barrier (MQB) using the GaInAsP/InP system has been demonstrated for the first time. n-i-n tunneling diodes consisting of MQB and bulk barriers were grown by chemical beam epitaxy (CBE). From the measurement of 77 K current-voltage characteristics, the effective potential barrier height of 1.3 times the classical conduction band offset was obtained in the MQB structure.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MIYAMOTO Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Inaba Yusaku
Department Of Materials Chemistry Graduate School Of Engineering Tohoku University
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Ikenaga Yoshihiko
Microsystem Research Ceterk Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Inaba Y
Department Of Materials Chemistry Graduate School Of Engineering Tohoku University
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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INABA Yuichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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UCHIDA Takashi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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YOKOUCHI Noriyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Precision and Intelligence Lab, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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