Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
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概要
- 論文の詳細を見る
We fabricated GaInAsP/InP short cavity lasers with semiconductor/air distributed Bragg reflectors (DBRs) by inductively coupled plasma etching with pure Cl_2 gas. Nearly vertical sidewalls with low roughness of 〜10 nm were achieved, separated by air spaces of three quarter wavelengths. The lowest threshold current normalized by the stripe width was 3.2 mA/μm. From this value, the DBR reflectivity was evaluated to be 85%, which agreed with the theoretical value obtained from a finite-difference time domain (FDTD) simulation. We compared two types of devices with different DBR shapes, and observed that DBR reflectivity was affected more by the tilt of the DBR sidewalls than the sidewall roughness. This result also agreed well with the FDTD theory.
- 社団法人応用物理学会の論文
- 2000-06-15
著者
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Koyama Fumio
Tokyo Institute Of Technology 4259 Nagatsuta
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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MATSUTANI Akihiro
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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SAKAI Atsushi
Yokohama National University, Department of Electrical and Computer Engineering
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BABA Toshihiko
Yokohama National University, Department of Electrical and Computer Engineering
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BABA Toshihiko
Division of Electrical and Computer Engineering, Yokohama National University
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Azuchi Munechika
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Iga Kenichi
Tokyo Institute Of Technology
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Baba T
Yokohama National Univ. Yokohama‐shi Jpn
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ARIGA Maiko
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Ariga M
Yokohama National University Division Of Electrical And Computer Engineering
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SEKIDO Yushi
Yokohama National University, Division of Electrical and Computer Engineering
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Sekido Yushi
Yokohama National University Division Of Electrical And Computer Engineering
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Ariga Maiko
Yokohama National University Division Of Electrical And Computer Engineering
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Matsutani Akihiro
Tokyo Inst. Technol. Yokohama Jpn
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Murakami A
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Baba Toshihiko
Yokohama National University
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Sakai Atsushi
Yokohama National University Division Of Electrical And Computer Engineering
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