Beryllium Doping for Ga_<0.47>In_<0.53>As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
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概要
- 論文の詳細を見る
High-concentration modulation doping of beryllium (Be) for GaInAs/InP quantum wells (QWs) was achieved by chemical beam epitaxy (CBE) up to 1×10^<19>cm^<-3>. The modulation-doped quantum well (MD-QW) structure showed strong photoluminescence intensity. Broad-contact separate-confinement-heterostructure (SCH) QW lasers were also fabricated to evaluate the quality of MD-QWs. The measured threshold current density was 1.5-2.0 kA/cm^2 for devices with 200μm width and 200-1000μm cavity length. High concentration and modulation doping for GaInAs/InP lasers was demonstrated.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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UCHIDA Takashi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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UCHIDA Toshikazu
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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YOKOUCHI Noriyuki
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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MIYAMOTO Tomoyuki
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Miyamoto Tomoyuki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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