Microfabrication of Dielectric Multilayer Reflector by Reactive Ion Etching and Characterization of Induced Wafer Damage
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概要
- 論文の詳細を見る
A reactive ion etching (RIE) system has been introduced to fabricate a tiny structure of dielectric multilayer reflector for a microcavity surface emitting laser. Some etching characteristics of dielectric materials (Si, SiO_2 and TiO_2) with CF_4 gas have been investigated using RIE. A 7-pair SiO_2/TiO_2 circular multilayer reflector with a diameter of 5 μm is successfully fabricated. In addition, the induced damage of the GaAs wafer was evaluated by PL measurement.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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MATSUTANI Akihiro
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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