Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
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概要
- 論文の詳細を見る
The effect of inelastic scattering on electron reflection in multiquantum barriers has been examined for the first time by using the damped resonant tunneling model. The electron reflectivity exhibits marked deterioration to values below unity at discrete energies in the virtual barrier. The largest dip in reflectivity is about 15% for an intraband relaxation time of 0.16 ps. It is also shown that this deterioration can be reduced by utilizing a strain-compensated superlattice in the multiquantum barriers.
- 社団法人応用物理学会の論文
- 1995-08-30
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Tokyo Institute Of Technology
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Loh Terhoe
Tokyo Institute Of Technology Precision And Intelligence Laboratory
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Furuya Kazuhito
Tokyo Institute Of Technology Dept. Of Physical Electronics
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Furuya Kazuhito
Tokyo Institute Of Technology
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