A Low-Threshold 1.3μm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser
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概要
- 論文の詳細を見る
The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8μm in diameter and 1.2μm in depth was realized with good reproduclbility. Low-threshold (I_<th>=52 mA) lasing operation of a 1.3-μm-range FCBH surface emitting laser with a pair of dielectric micromirrors was achieved in a pulsed condition at 0℃.
- 社団法人応用物理学会の論文
- 1993-03-15
著者
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Koyama Fumio
Tokyo Institute Of Technology 4259 Nagatsuta
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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Baba Toshihiko
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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BABA Toshihiko
Division of Electrical and Computer Engineering, Yokohama National University
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Iga Kenichi
Tokyo Institute Of Technology
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Baba T
Yokohama National Univ. Yokohama‐shi Jpn
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Matsuoka K
Semiconductor Leading Edge Technol. Yokohama Jpn
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MATSUOKA Kazuyoshi
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Baba Toshihiko
Tokyo Institute Of Technology Precision And Intelligence Lab.
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Matsuoka Kazuyoshi
Tokyo Institute Of Technology Precision And Intelligence Laboratory
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