1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
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概要
- 論文の詳細を見る
We have demonstrated a λ = 1.15 μm highly strained GaInAs/GaAs quantum well laser grown on GaAs (311)B substrate for the first time. The threshold current density of double quantum well lasers was as low as 410 A/cm^2 and the characteristic temperature in the operating temperature range from 10℃ to 70℃ was 210 K. Wavelength extension to near 1.3 μm and improved polarization stability of vertical-cavity surface-emitting lasers (VCSELs) formable on GaAs substrate can now be expected.
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Inoue K
Technol. Res. Inst. Osaka Prefecture Osaka Jpn
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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MIYAMOTO Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Iga K
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Iga K
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Azuchi Munechika
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto T
Tokyo Inst. Technol. Tokyo Jpn
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SHINADA Satoshi
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ARAI Masakazu
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Shinada S
National Institute Of Information And Communications Technology
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Miura Toru
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Tokyo Inst. Technol. Yokohama Jpn
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Murakami A
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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