Azuchi Munechika | Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology

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概要

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著作論文

Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage
Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl_2
Cl_2-based Inductively Coupled Plasma Etching of InP Using Internal Antenna
Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
Single High-Order Transverse Mode Surface Emitting Laser with Micromachined Surface Relief(Special Issue on Recent Progress of Integrated Photonic Devices)
Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
Inductively coupled plasma etching of silicon using solid iodine as an etching gas source (Special issue: Microprocesses and nanotechnology)
1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs(311)B Substrate under High-Speed Modulation
Vertical-Cavity Surface-Emitting Laser Array on GaAs(311)B Substrate Exhibiting Single-Transverse Mode and Stable-Polarization Operation
AlAs Oxidation System with H_2O Vaporizer for Oxide-Confined Surface Emitting Lasers
Monolithic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B

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