AlAs Oxidation System with H_2O Vaporizer for Oxide-Confined Surface Emitting Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-06-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Azuchi Munechika
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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SHINADA Satoshi
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ARAI Masakazu
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Shinada S
National Institute Of Information And Communications Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Tokyo Inst. Technol. Yokohama Jpn
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Murakami A
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
- Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
- Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy
- Elongation of Emission Wavelength of GaInAsSb-Covered (Ga) InAs Quantum Dots Grown by Molecular Beam Epitaxy
- Effect of Quantum Well Width Reduction for GaInNAs/GaAs Lasers
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
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- Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity
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- Design and Lasing Operation of Micro-Arc-Ring Lasers
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- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
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- Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
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- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
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- Vertical Cavity Surface-Emitting Laser Array for 1.3μm Range Parallel Optical Fiber Transmissions
- Electron Wave Reflection by Multiquantum Barrier
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
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- A Novel Birefringent Distributed Bragg Reflector Using a Metal/Dielectric Polarizer for Polarization Control of Surface-Emitting Lasers
- First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
- GaInAsP/InP Low-Mesa CPBH Surface Emitting Laser with an Optimally Deposited MgO/Si Multilayer Laser Mirror
- A Low-Threshold 1.3μm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser
- GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement
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- Threshold and Modulation Characteristics of Photon-Recycled Semiconductor Lasers
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