A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
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概要
- 論文の詳細を見る
Some etching characteristics for GaAs and InP with Cl_2 gas using a reactive ion beam etching (RIBE) system have been studied. The employed etching gas was ionized by electron cyclotron resonance (ECR) at a gas pressure of about 6×10<-4> Torr; the applied microwave power was 300W. The etch rate was measured as a function of the substrate temperature and the applied ion extraction voltage. At low temperatures, the etch rate of InP was proportional the five halves of the extraction voltage. This agreed well with a theoretical consideration. The maximum etch rates for InP and GaAs were 2.0 and 1.2μm/min, respectively, both at 200℃.
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Tadokoro T
Special Research Laboratory For Optical Science Kanagawa Academy Of Science And Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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TADOKORO Takashi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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