Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
スポンサーリンク
概要
- 論文の詳細を見る
The GaN-based vertical cavity surface emitting laser operating in the ultraviolet spectral region is proposed and its threshold current density is estimated. The calculated result indicates that low-threshold surface emitting lasers using a GaN layer as an active region can be realized by employing reasonably highly reflective mirrors such as AlN/AlGaN multilayer mirrors.
- 社団法人応用物理学会の論文
- 1995-07-15
著者
-
Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
-
Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
-
Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
-
Honda T
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
-
HONDA Tohru
Precision and Intelligence Laboratory, Tokyo Institute of Technology
-
KATSUBE Atsushi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
-
SAKAGUCHI Takahiro
Precision and Intelligence Laboratory, Tokyo Institute of Technology
-
Sakaguchi T
Microsystem Research Center Tokyo Institute Of Technology
-
Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
-
Katsube Atsushi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
関連論文
- Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
- Modeling and Fabrication of Hollow Optical Waveguide for Photonic Integrated Circuits
- Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
- Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
- Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy
- Elongation of Emission Wavelength of GaInAsSb-Covered (Ga) InAs Quantum Dots Grown by Molecular Beam Epitaxy
- Effect of Quantum Well Width Reduction for GaInNAs/GaAs Lasers
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- Temperature Characteristics of λ= 1.3μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Design and Lasing Operation of Micro-Arc-Ring Lasers
- Characterization of Residual Stress in Active Region due to AlAs Native Oxide of Vertical-Cavity Surface-Emitting Lasers
- In situ Observation of Etching Profile in Inductively Coupled Plasma Etching of GaAs and InP using Long Distance Microscope
- InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers : Optics and Quantum Electronics
- Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction
- Long Wavelength GaInAsP/InP Laser with n-n Contacts Using AlAs/InP Hole Injecting Tunnel Junction
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
- GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
- Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs
- Carrier Transport in p-Type GaInAsP/InP Distributed Bragg Reflectors
- Near-Field Analysis of Micro-Aperture Surface Emitting Laser for High Density Optical Data Storage
- Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage
- High-Power CW Operation of GalnAsP/InP Superlumlnescent Light-Emitting Diode with Tapered Active Region : Optics and Quantum Electronics
- Solid Source Dry Etching Process for GaAs and InP
- Iodine Solid Source Inductively Coupled Plasma Etching of InP
- Vertical and Smooth Microfabrication of InP Using Simple High-Density Plasma System with SmCo Ring Magnet
- Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl_2
- Cl_2-based Inductively Coupled Plasma Etching of InP Using Internal Antenna
- Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
- Single High-Order Transverse Mode Surface Emitting Laser with Micromachined Surface Relief(Special Issue on Recent Progress of Integrated Photonic Devices)
- Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
- Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset
- Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP
- Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
- Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl_2/Xe
- Vertical and Smooth Etching of InP by Cl_2/Xe Inductively Coupled Plasma
- Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Noise Suppression and Intensity Modulation in Gain-Saturated Semiconductor Optical Amplifiers and Its Application to Spectrum-Sliced Light Sources
- High Power GaInAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (II) : Semiconductor Distributed Bragg Reflectors
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (I) : Dielectric Cavity Structures
- Vertical Cavity Surface-Emitting Laser Array for 1.3μm Range Parallel Optical Fiber Transmissions
- Electron Wave Reflection by Multiquantum Barrier
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
- Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
- Theoretical and Experimental Estimations of Photon Recycling Effect in Light Emitting Devices with a Metal Mirror
- Continuous Wave GaInAsP/InP Surface Emitting Lasers with a Thermally Conductive MgO/Si Mirror
- A Novel Birefringent Distributed Bragg Reflector Using a Metal/Dielectric Polarizer for Polarization Control of Surface-Emitting Lasers
- First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
- GaInAsP/InP Low-Mesa CPBH Surface Emitting Laser with an Optimally Deposited MgO/Si Multilayer Laser Mirror
- A Low-Threshold 1.3μm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser
- Heavily p-Type Doped AlAs Growth on GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence
- Inductively coupled plasma etching of silicon using solid iodine as an etching gas source (Special issue: Microprocesses and nanotechnology)
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
- GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
- GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector
- An Optical Absorption Property of Highiy Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy
- Spray Selective Etch Process for Short-Cavity Fabrication of GaAs/GaAlAs Surface Emitting Laser
- Beryllium Doping for Ga_In_As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
- Growth of Ga_In_As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)
- Highly Beryllium-Doped and Lattice-Matched GaInAsP/InP Growth by Chemical Beam Epitaxy (CBE)
- Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
- P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure
- 2×2 Multiwavelength Micromachined AIGaAs/GaAs Vertical Cavity Filter Array with Wavelength Control Layer
- Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
- Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
- Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step Etch
- Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer
- Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine