P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Hatori Nobuaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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OHNOKI Noriyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MIZUTANI Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ohnoki Noriyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ohtake N
Niigata Univ. Niigata Jpn
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NISHIYAMA Nobuhiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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OHTAKE Nobuyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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