A Completely Single-Mode and Single-Polarization Vertical-Cavity Surface Emitting Lasers Grown on GaAs (311)B Substrate
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概要
- 論文の詳細を見る
We realized a completely single-mode and single-polarization 0.98μm InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) grown on a GaAs (311) B substrate. The device operates in a single transverse, longitudinal mode and polarization state in the entire tested current range. An oxide confinement structure with a nearly square oxide aperture of 2.5μm×3.0μm was formed for transverse mode control. We obtained a side mode suppression ratio of over 35 dB and a polarization mode suppression ratio of over 25 dB between the [233] and the [011] axis modes in the entire driving range. The threshold voltage and electrical specific resistance are as low as 1.5 V and 1.1×10^<-4>Ω・cm^6lt;-2>, respectively. One of the tested devices shows a record low threshold current of 230μA for non-(100) substrates.
- 社団法人応用物理学会の論文
- 1998-06-01
著者
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Hatori Nobuaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MIZUTANI Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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