C_<60> Resist Mask of Electron Beam Lithography for Chlorine-Based Reactive Ion Beam Etching
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概要
- 論文の詳細を見る
We have examined a potential of a C_<60> film as an electron-beam resist for a chlorine-based reactive ion beam etching mask. The sensitivity of C_<60> as a negative-type electron beam resist was 〜25 mC/cm^2 for monochlorobenzene. The maximum etching rate ratios of GaAs and InP to C_<60> were 20 and 5, respectively. In addition, we have succeeded in fabricating micropillars of <0.5 μm in diameter in GaAs with this C_<60> mask for the first time.
- 社団法人応用物理学会の論文
- 1998-07-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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