Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
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概要
- 論文の詳細を見る
The sidewall damage induced by reactive ion-beam etching (RlBE) with Cl_2 has, been studied. The sidewall damage depth was estimated from the ion-beam-angle dependence, and the pltotoluminescence (PL) emitted from the etched sidewall of a GaInAsP/InP DH wafer was directly measured. The sidewall damage depth of an InP substrate was estimated as less than a few hundred angstroms at an extraction voltage of 400 V. The PL intensity from the sidewall of a GaInAsP/InP DH wafer decreased considerably after RIBE, compared with that of a cleaved facet. The deteriorated PL intensity was recovered remarkably through passivation with (NH_4)_2S_x.
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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