Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
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概要
- 論文の詳細を見る
We have demonstrated a selective etch process of removing a GaAs substrate for the fabrication of ZnSe-based surface emitting lasers using the PA etchant (NH_3OH:H_2O_2:H_2O=x:33:10) and employing a spray method. The etch rate of a GaAs substrate was 3.7 μm/min with a preferential etch rate ratio of over 20 against ZnSe layers. The surface of the ZnSSe layer after removal of a substrate was smooth enough to fabricate ZnSe-based surface emitting lasers.
- 社団法人応用物理学会の論文
- 1994-02-15
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Yanashima Katsunori
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Honda T
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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HONDA Tohru
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Yamamoto Kazunari
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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