Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-09-15
著者
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Miura T
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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MIURA Toru
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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MATSUTANI Akihiro
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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MIYAMOTO Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Azuchi Munechika
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto T
Tokyo Inst. Technol. Tokyo Jpn
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Miura Toru
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Murakami A
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology
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KOYAMA Fumio
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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- Modeling and Fabrication of Hollow Optical Waveguide for Photonic Integrated Circuits
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- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
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- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
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- Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
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- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
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