Light-Induced Transverse-Mode Switching of a Vertical-Cavity Surface-Emitting Laser For Optical Signal Processing
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
-
Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
-
Onishi Yutaka
Microsystem Research Center Tokyo Institute Of Technology
-
ZAH Chung-en
Corning Inc., One Science Center Dr. Corning
-
CANEAU Catherine
Corning Incorporated
-
Zah Chung-en
Corning Incorporated
-
Caneau C
Corning Incorporated
-
NISHIYAMA Nobuhiko
Corning Incorporated
関連論文
- C-3-47 Zero-dispersion Slow Light in Hollow Waveguide with High-contrast Grating
- Design and Fabrication of Grating Demultiplexer Using Hollow Optical Waveguide
- Novel Variable Optical Attenuator Based on Three-Dimensional Hollow Waveguide
- Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
- Modeling and Fabrication of Hollow Optical Waveguide for Photonic Integrated Circuits
- Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
- Analysis on the Compensating Thermal Lensing Effect Using a Convex Mirror in Vertical-Cavity Surface-Emitting Lasers
- Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
- Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy
- GaInNAs Intermediated Layer for Improvement of Lasing Characteristics of GaInNAs Quantum Well Lasers
- p-Type Doping Characteristics of GaInNAs : Be Grown by Solid Source Molecular Beam Epitaxy
- Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells
- Elongation of Emission Wavelength of GaInAsSb-Covered (Ga) InAs Quantum Dots Grown by Molecular Beam Epitaxy
- Effect of Quantum Well Width Reduction for GaInNAs/GaAs Lasers
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- Temperature Characteristics of λ= 1.3μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Densely Integrated Multipoe-Wavelength Vertical-Cavity Surface-Emitting Laser Array
- Athermal 850nm Vertical Cavity Surface Emitting Lasers with Thermally Actuated Cantilever Structure
- Tunable Three-Dimensional Nanostep Hollow Optical Waveguide with Low Polarization Dependence
- 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers : Optics and Quantum Electronics
- High power 980-nm pump lasers
- [Invited Paper]High power 980-nm pump lasers
- 1.5 μm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition
- All-Optical Regeneration Using Transverse Mode Switching in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers
- Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure
- Light-Induced Transverse-Mode Switching of a Vertical-Cavity Surface-Emitting Laser For Optical Signal Processing
- Design and Fabrication of Double-Cavity Tunable Filter Using Micromachined Structure
- Optical Characterization of InGaAS Quantum Wells after InP-GaAs Low-Temperature Wafer Bonding : Semiconductors
- Near-Field Optical Probing Using a Microaperture GaInAs/GaAs Surface Emitting Laser : Optics and Quantum Electronics
- Multiple-Wavelength Vertical-Cavity Surface-Emitting Lasers by Grading a Spacer Layer for Short-Reach Wavelength Division Multiplexing Applications
- Tunable Planar Air-Core Resonator Based on Tunable Hollow Waveguide
- Wavelength Tuning of Double-Cavity Micromachined Filter with Electrical and Thermal Actuations
- Size Reduction of Tunable Micromachined Filters for Fast Wavelength Tuning
- Micromachined GaAs/AlGaAs Resonant-Cavity Light Emitter with Small Temperature Dependence of Emission Wavelength
- Single High-Order Transverse Mode Surface Emitting Laser with Micromachined Surface Relief(Special Issue on Recent Progress of Integrated Photonic Devices)
- Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Characterization of Single-Wavelength Optically Pumped GaInAsP/InP Vertical-Cavity Surface-Emitting Lasers with Dielectric Mirrors
- Design and Fabrication Process of Optically Pumped GaInAsP/InP Stripe Laser with Resonant Pumping for High-Power Operation : Optics and Quantum Electronics
- GaInAs/InP Superlattice DBR for Long-Wavelength VCSELs
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
- Design of Long-Wavelength Vertical-Cavity Surface-Emitting Lasers with Resonant Optical Pumping
- Light-Induced Transverse-Mode Switching of a Vertical-Cavity Surface-Emitting Laser For Optical Signal Processing
- Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure