1.5 μm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Bhat Rajaram
Corning Inc. One Science Center Dr. Corning
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Zah C‐e
Corning Inc. One Science Center Dr. Corning
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Lee Tien-pei
Bell Communications Research
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CANEAU Catherine
Corning Incorporated
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KASUKAWA Akihiko
Bell Communications Research
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BHAT Rajaram
Bell Communications Research
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CANEAU Catherine
Bell Communications Research
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ANDREADAKIS Nicholas
Bell Communications Research
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PATHAK Bhadresh
Bell Communications Research
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ZAH Chung-En
Bell Communications Research
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KOZA Mark.A.
Bell Communications Research
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Caneau C
Corning Incorporated
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Bhat Rajaram
Corning Incorporated
関連論文
- 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells
- High power 980-nm pump lasers
- [Invited Paper]High power 980-nm pump lasers
- 1.5 μm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition
- All-Optical Regeneration Using Transverse Mode Switching in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers
- Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure
- Light-Induced Transverse-Mode Switching of a Vertical-Cavity Surface-Emitting Laser For Optical Signal Processing
- Internal Optical Waveguide Loss and p-Type Absorption in Blue and Green InGaN Quantum Well Laser Diodes
- Impact of Carrier Transport on Aquamarine--Green Laser Performance
- 60mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190K
- Light-Induced Transverse-Mode Switching of a Vertical-Cavity Surface-Emitting Laser For Optical Signal Processing
- Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure