Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure
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概要
- 論文の詳細を見る
A vertical-cavity intensity modulator using a 1.55 μm surface-emitting laser (VCSEL) structure has been demonstrated. A contrast ratio of more than 10 dB with a low voltage of 1 V was obtained with an input light power of 1.9 dBm. The insertion loss was as low as 3.8 dB in the on state at a bias voltage of 1 V. The proposed device has potential for low insertion loss, low modulation voltage and polarization-insensitive operation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-06-15
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Onishi Yutaka
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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CANEAU Catherine
Corning Incorporated
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Zah Chung-en
Corning Inc. One Science Center Dr. Corning
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NISHIYAMA Nobuhiko
Corning Incorporated
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ONODERA Atsushi
Microsystem Research Center, Tokyo Institute of Technology
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Onodera Atsushi
Microsystem Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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