Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
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概要
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The photoluminescence (PL) characteristics of InAs quantum dots on a GaNAs buffer layer grown by metalorganic chemical vapor deposition were investigated. A maximum 60 nm redshift was observed for a nitrogen composition of less than 3% in the buffer layer with an increase in emission efficiency in comparison with a conventional GaAs buffer layer. A large intensity increase with a blueshift of PL was observed for a buffer layer of 3% nitrogen composition. These were due to a change in the dot morphology on the GaNAs buffer layer. The InAs supply and growth temperature dependences of PL properties were also examined in detail.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-06-25
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Suzuki Ryoichiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsuura Tetsuya
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Matsuura Tetsuya
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Suzuki Ryoichiro
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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