Photoluminescence Characteristics of InAs Quantum Dots with GaInP Cover Layer Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
The photoluminescence (PL) characteristics of InAs quantum dots (QDs) with a GaInP cover layer grown by metalorganic chemical vapor deposition were investigated to clarify the effect of the cover layer. By comparing the PL peak wavelength between the GaInP and GaInAs covered structures, the strain of the cover layer was identified as the main mechanism responsible for the emission wavelength shift of the InAs QDs. The PL emission efficiency and the thermal annealing effect of the GaInP-covered structure were also investigated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-07-25
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Suzuki Ryoichiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Suzuki Ryoichiro
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sengoku Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Nemoto Kosuke
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Tanabe Satoru
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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