Wavelength Extension Effect on Lasing Characteristics of Highly-Strained GaInAs/GaAs Vertical-Cavity Surface-Emitting Lasers with Cavity Detuning
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概要
- 論文の詳細を見る
Cavity detuned highly-strained GaInAs/GaAs vertical cavity surface emitting lasers (VCSELs) were investigated. Devices emitting beyond 1.2 μm of the wavelength were realized by combining conventional quantum wells emitting at 1.18 μm and large wavelength detuned cavities. Various detuning conditions from $-35$ to 80 nm were compared for clarifying the detuning effect. The longest wavelength was 1.27 μm for an 80 nm detuned device. The highest operating temperature of a 55 nm detuned device was 140 °C under cw operation. It was found that approximately 50 nm detuning was necessary to reach the threshold gain level for a large detuned device and the condition was produced by self-heating. Relaxation resonance frequencies were characterized and over 2 GHz was observed even for a 1.27 μm VCSEL.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-08-30
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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KONDO Takashi
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Matsutani Akihiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Uchiyama Yasuhiro
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Takeda Kazutaka
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Uchida Takeshi
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kitabayashi Naoto
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Takeda Kazutaka
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Matsutani Akihiro
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kondo Takashi
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Uchiyama Yasuhiro
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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