High-Speed Operation of Optical Preamplifier Using Inverted Amplified Spontaneous Emission Signal of Saturated Semiconductor Optical Amplifier : Optics and Quantum Electronics
スポンサーリンク
概要
- 論文の詳細を見る
We investigate the dynamics of an optical preamplifier using an inverted amplified spontaneous emission (ASE) signal of a saturated semiconductor optical amplifier (SOA). The small-signal response of the converted ASE was measured and its 3 dB band-width was over 9 GHz when the injection current of the SOA was increased to more than 200 mA. The rise and fall times of the converted output ASE were also evaluated. In addition, we achieved 10 Gbit/s operation of the proposed preamplifier. The minimum receiver sensitivity was improved by 7 dB using the preamplifier for the 10 Gbit/s signal.
- 社団法人応用物理学会の論文
- 2002-06-01
著者
-
Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
-
Yamatoya Takeshi
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
関連論文
- C-3-47 Zero-dispersion Slow Light in Hollow Waveguide with High-contrast Grating
- Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
- Modeling and Fabrication of Hollow Optical Waveguide for Photonic Integrated Circuits
- Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
- Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
- Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy
- Elongation of Emission Wavelength of GaInAsSb-Covered (Ga) InAs Quantum Dots Grown by Molecular Beam Epitaxy
- Effect of Quantum Well Width Reduction for GaInNAs/GaAs Lasers
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- Temperature Characteristics of λ= 1.3μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Athermal 850nm Vertical Cavity Surface Emitting Lasers with Thermally Actuated Cantilever Structure
- Tunable Three-Dimensional Nanostep Hollow Optical Waveguide with Low Polarization Dependence
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers : Optics and Quantum Electronics
- All-Optical Regeneration Using Transverse Mode Switching in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers
- Optical Characterization of InGaAS Quantum Wells after InP-GaAs Low-Temperature Wafer Bonding : Semiconductors
- Near-Field Optical Probing Using a Microaperture GaInAs/GaAs Surface Emitting Laser : Optics and Quantum Electronics
- Multiple-Wavelength Vertical-Cavity Surface-Emitting Lasers by Grading a Spacer Layer for Short-Reach Wavelength Division Multiplexing Applications
- Tunable Planar Air-Core Resonator Based on Tunable Hollow Waveguide
- Wavelength Tuning of Double-Cavity Micromachined Filter with Electrical and Thermal Actuations
- Single High-Order Transverse Mode Surface Emitting Laser with Micromachined Surface Relief(Special Issue on Recent Progress of Integrated Photonic Devices)
- Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Densely Integrated Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array
- Design and Fabrication Process of Optically Pumped GaInAsP/InP Stripe Laser with Resonant Pumping for High-Power Operation : Optics and Quantum Electronics
- GaInAs/InP Superlattice DBR for Long-Wavelength VCSELs
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
- Modeling of Second-Harmonic Generation from Intracavity Surface-Emitting Lasers with Nonlinear Crystal
- Proposal of Optically Pumped Tunable Surface Emitting Laser : Optics and Quantum Electronics
- Design of Long-Wavelength Vertical-Cavity Surface-Emitting Lasers with Resonant Optical Pumping
- High-Speed Operation of Optical Preamplifier Using Inverted Amplified Spontaneous Emission Signal of Saturated Semiconductor Optical Amplifier : Optics and Quantum Electronics
- All-Optical Regeneration Using a Vertical-Cavity Surface-Emitting Laser with External Light Injection(Lasers, Quantum Electronics)
- Modeling of All-Optical-Signal Processing Devices Based on Two-Mode Injection-Locked Vertical-Cavity Surface-Emitting Laser
- GaInNAs Intermediate Layer for Improvement of Lasing Characteristics of GaInNAs Quantum Well Lasers
- Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells
- All-optical regenerator with re-polarization function based on dual optical injection VCSEL
- Design and Fabrication of Multi-Mode Interference Hollow Waveguide Optical Switch with Variable Air Core
- Light-Induced Transverse-Mode Switching of a Vertical-Cavity Surface-Emitting Laser For Optical Signal Processing
- Size Reduction of Tunable Micromachined Filters for Fast Wavelength Tuning
- Micromachined GaAs/AlGaAs Resonant-Cavity Light Emitter with Small Temperature Dependence of Emission Wavelength
- Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure
- Design and Fabrication of Double-Cavity Tunable Filter Using Micromachined Structure
- Spot Size Dependence of Filtering Characteristics in Micromachined GaAlAs/GaAs Tunable Filters
- Design, Fabrication, and Characterization of Tunable Micromachined Filter with Double-Cavity Structure
- Thermal Resistance Reduction of Vertical-Cavity Surface-Emitting Lasers by Thickness-Modulated Distributed Bragg Reflector
- Low-Loss and Polarization-Insensitive Semiconductor Hollow Waveguide with GaAs/AlAs Multi-Layer Mirrors
- $p$-Type Doping Characteristics of GaInNAs:Be Grown by Solid Source Molecular Beam Epitaxy
- Investigation and Theoretical Analysis of Low-Loss Three-Dimensional Hollow Waveguides for Widely Tunable Optical Devices
- Analysis on the Compensating Thermal Lensing Effect Using a Convex Mirror in Vertical-Cavity Surface-Emitting Lasers
- Wavelength Extension Effect on Lasing Characteristics of Highly-Strained GaInAs/GaAs Vertical-Cavity Surface-Emitting Lasers with Cavity Detuning
- Characterization of Single-Wavelength Optically Pumped GaInAsP/InP Vertical-Cavity Surface-Emitting Lasers with Dielectric Mirrors
- Short-Period GaInAs/InP Superlattice for Distributed Bragg Reflector
- Effect of Index Variation in Active Layer on Transverse Mode for Vertical-Cavity Surface-Emitting Lasers
- Novel Variable Optical Attenuator Based on Three-Dimensional Hollow Waveguide
- Design and Fabrication of Grating Demultiplexer Using Hollow Optical Waveguide
- Giant Bragg Wavelength Tuning of Tunable Hollow Waveguide Bragg Reflector
- Air Core Thickness Dependence of Propagation Loss of Slab Hollow Waveguide
- Proposal of Tunable Hollow Waveguide Distributed Bragg Reflectors
- Control of Group Delay and Chromatic Dispersion in Tunable Hollow Waveguide with Highly Reflective Mirrors
- Photoluminescence Characteristics of InAs Quantum Dots with GaInP Cover Layer Grown by Metalorganic Chemical Vapor Deposition
- Monolithic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers
- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
- Tunable Planar Air-Core Resonator Based on Tunable Hollow Waveguide
- Characterization of Spot-Size Dependence of Coarse Wavelength Division Multiplexing Dielectric Multilayer Thin-Film Filters for Planner Lightwave Circuit Platforms