GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
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概要
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We have demonstrated a dynamically stable polarization operation of GaInAs/GaAs vertical-cavity surfaceemitting laser (VCSEL) array grown on a GaAs (311) B substrate. A fabricated 3×3 VCSEL array consists of devices with an oxide aperture of 3.4μm×3.4μm. The threshold current was 0.61 ± 0.05mA and the threshold voltage was 1.79±0.03V. All of the devices exhibited single-transverse mode operation with an injection current up to three times the threshold. The side-mode suppression ratio (SMSR) is larger than 30 dB. The array also exhibited stable-polarization operation with an orthogonal polarization suppresson ratio (OPSR) of over 25dB. We measured the time-resolved OPSR under square-wave direct modulation. It was found that the orthogonal non-lasing mode was suppressed even at the first peak of relaxation oscillation with OPSR >17dB. In an experiment of 5Gb/s non-return-tozero (NRZ) pseudo-random bit sequence (PRBS) modulation, the OPSR was maintained being greater than 27dB. These observed stable and single polarization characteristics were originated from the anisotropic optical gain of sterained GaInAs/GaAs quantum wells formed on (311) B substrate. We also carried out an intensity noise measurement under single-transverse and stable polarization operation for the first time. The relative intensity noise (RIN) of-140dB/Hz was obtained. In addition, we achieved 2.5Gb/s data transmission through a 100m multi-mode fiber. No error floor was observed at-20dBm of received power level. The minimum received power is determined by the thermal noise.
- 社団法人電子情報通信学会の論文
- 2001-03-01
著者
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Inoue K
Technol. Res. Inst. Osaka Prefecture Osaka Jpn
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Arai Masakazu
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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MATSUTANI Akihiro
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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IGA Kenichi
Microsystem Research Center, Tokyo Institute of Technology
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AZUCHI Munechika
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Iga K
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Iga K
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Azuchi Munechika
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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SHINADA Satoshi
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Shinada S
National Institute Of Information And Communications Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Tokyo Inst. Technol. Yokohama Jpn
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Matsutani Akihiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Murakami A
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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