p-Type Doping Characteristics of GaInNAs : Be Grown by Solid Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-04-01
著者
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Miyamoto T
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ohta M
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Ohta Masataka
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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MIYAMOTO Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MATSUURA Tetsuya
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MATSUI Yasutaka
Microsystem Research Center, P & I Laboratories, Tokyo Institute of Technology
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MAKINO Shigeki
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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