1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
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概要
- 論文の詳細を見る
A highly strained GaInAs vertical-cavity surface-emitting laser (VCSEL) emitting at 1.12μm has been realized on a GaAs(311)B substrate by metal organic chemical vapor deposition (MOCVD) for the first time. The threshold current of an 8μm oxide aperture device was as low as 0.9mA. This device operated at up to 170℃ without a heatsink under the CW condition. The polarization direction of the oscillation mode was stable and the orthogonal polarization suppression ratio (OPSR) was 30dB. The operating lifetime of over 2000 under room-temperature CW conditions was confirmed without any degradation in spite of high strain of over 2%.
- 社団法人応用物理学会の論文
- 2001-05-01
著者
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Miyamoto T
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Inoue K
Technol. Res. Inst. Osaka Prefecture Osaka Jpn
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Arai Masakazu
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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MATSUTANI Akihiro
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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IGA Kenichi
Microsystem Research Center, Tokyo Institute of Technology
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MIYAMOTO Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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AZUCHI Munechika
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Iga K
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Iga K
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Azuchi Munechika
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto T
Tokyo Inst. Technol. Tokyo Jpn
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SHINADA Satoshi
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Shinada S
National Institute Of Information And Communications Technology
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Miura Toru
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Tokyo Inst. Technol. Yokohama Jpn
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Matsutani Akihiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Murakami A
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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