Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Miyamoto T
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kawaguchi M
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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MIYAMOTO Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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KAWAGUCHI Masao
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kawaguchi Masao
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Miura Toru
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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