Elongation of Emission Wavelength of GaInAsSb-Covered (Ga) InAs Quantum Dots Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-01-15
著者
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Miyamoto T
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ohta M
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Ohta Masataka
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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MIYAMOTO Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MATSUURA Tetsuya
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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FURUHATA Tatsuya
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology
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MATSUI Yasutaka
Microsystem Research Center, P & I Laboratories, Tokyo Institute of Technology
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KAGEYAMA Takeo
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Kageyama Takeo
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miura Toru
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Matsui Yasutaka
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Furuhata Tatsuya
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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