Continuous Wave GaInAsP/InP Surface Emitting Lasers with a Thermally Conductive MgO/Si Mirror
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概要
- 論文の詳細を見る
We have fabricated continuous wave (cw) GaInAsP/InP vertical-cavity surface emitting lasers. For effective carrier confinement, we employed a planar buried heterostructure grown by a single-step maskless regrowth process. In addition, we introduced a novel multilayer mirror consisting of magnesia (MgO) and silicon (Si), which provides high reflectivity and high thermal conductivity simultaneously. Both threshold reduction and improvement of the highest cw temperature were clearly demonstrated by this new mirror ; the highest cw temperature of 14℃ was achieved with the threshold current of 22 mA. From the comparison of threshold current between cw and pulsed conditions, the increase of device temperature by the cw injection was estimated to be 8-15 K.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Koyama Fumio
Tokyo Institute Of Technology 4259 Nagatsuta
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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BABA Toshihiko
Yokohama National University, Department of Electrical and Computer Engineering
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BABA Toshihiko
Division of Electrical and Computer Engineering, Yokohama National University
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Suzuki Katsumasa
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Iga Kenichi
Tokyo Institute Of Technology
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Baba T
Yokohama National Univ. Yokohama‐shi Jpn
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Yogo Yukiaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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YOGO Yukiaki
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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SUZUKI Katsumasa
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Yogo Yukiaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Baba Toshihiko
Yokohama National University
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