Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence
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概要
- 論文の詳細を見る
The thermal annealing effect on the photoluminescence (PL) characteristics of GaInNAs/GaAs quantum wells (QWs) grown by chemical beam epitaxy (CBE) using radical nitrogen is presented. The room-temperature PL peak intensity of GaInNAs/GaAs QWs increased about 70 times and the linewidth of PL spectra decreased after annealing at 675℃ for 30 seconds. The blue shift of the PL peak wavelength of GaInNAs/GaAs QWs and GaNAs/GaAs QWs, due to the structural change of QWs was observed. It was found that the blue shift was caused by In-Ga interdiffusion rather than nitrogen atom diffusion. The interdiffusion caused by defects is thought to reduce the number of non radiative centers, resulting in the improvement of PL characteristics. The optimum annealing temperature depends on the composition.
- 社団法人応用物理学会の論文
- 1999-03-15
著者
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Koyama Fumio
Tokyo Institute Of Technology 4259 Nagatsuta
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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MIYAMOTO Tomoyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Iga Kenichi
Tokyo Institute Of Technology
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Makino Shigeki
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Kageyama Takeo
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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KAGEYAMA Takeo
Tokyo Institute of Technology
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MAKINO Shigeki
Tokyo Institute of Technology
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