Growth of Ga_<0.47>In_<0.53>As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)
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概要
- 論文の詳細を見る
GaInAs/InP wafers with a thick active layer (0.5-2.0 μm) were grown by chemical beam epitaxy (CBE). Stripe-contact lasers were fabricated to evaluate these wafers. The lowest normalized threshold current density obtained was 7.9 kA/cm^2・μm for devices with a 2.0 μm thick active layer. This value is almost acceptable for application to surface emitting lasers.
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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UCHIDA Takashi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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YOKOUCHI Noriyuki
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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UCHIDA Toshi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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MISE Kazuaki
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Mise K
Hiroshima Univ. Higashi‐hiroshima Jpn
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